| PART |
Description |
Maker |
| MIE-534H4 534H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| MIE-324A4 324A4 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| SE1103 |
High Speed Infrared Light Emitting Diode
|
NEC Electronics
|
| VSMB2943GX01 VSMB2943RGX01 |
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW
|
Vishay Siliconix
|
| VSLB3940 VSLB394010 |
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
|
Vishay Siliconix
|
| TSFF5510 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| TSHF5200 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
VISAY[Vishay Siliconix]
|
| TSHA5503 TSHA550 TSHA5500 TSHA5501 TSHA5502 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
VISAY[Vishay Siliconix]
|
| TSHG5210 TSHG521009 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| VSMB1940X01 |
High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| VSMY2850RG11 |
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
